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Plastic Encapsulated Zener Diode Medium Current Planar Die Construction CBI BZT52B7V5S Lead Free Version

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Plastic Encapsulated Zener Diode Medium Current Planar Die Construction CBI BZT52B7V5S Lead Free Version

Description : SOD-323 Single Zener Diodes RoHS

Mfr. Part # : BZT52B7V5S

Model Number : BZT52B7V5S

Package : SOD-323

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Product Overview

The BZT52BXXXS series of plastic-encapsulated Zener diodes are designed for general-purpose applications requiring medium current. Featuring a planar die construction, these diodes are ideally suited for automated assembly processes. They are available in a lead-free version, offering a wide Zener voltage range from 2.4V to 39V. The series is manufactured by Heyuan China Base Electronics Technology Co., Ltd.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Product Type: Zener Diode
Encapsulation: Plastic
Die Construction: Planar
Lead Free Version: Available

Technical Specifications

Type Number	Type Code	Nominal Zener Voltage (V) (VZ@IZT)	Zener Voltage Min (V)	Zener Voltage Max (V)	Test Current (mA) (IZT)	Maximum Zener Impedance () (ZZT@IZT)	Maximum Reverse Current (A) (IR@VR)	Typical Temperature Coefficient (mV/C) (VZ@IZTC)	Forward Voltage (V) (VF @ IF = 10mA)	Power Dissipation (mW) (Pd)	Thermal Resistance (C/W) (RJA)	Junction Temperature (C) (Tj)	Storage Temperature Range (C) (Tstg)
BZT52B2V4S	2WX	2.4	2.35	2.45	5	100	50	-3.5	0.9	200	625	150	-55 ~ +150
BZT52B2V7S	2W1	2.7	2.65	2.75	5	100	20	-3.5	0.9	200	625	150	-55 ~ +150
BZT52B3V0S	2W2	3.0	2.94	3.06	5	95	10	-3.5	0.9	200	625	150	-55 ~ +150
BZT52B3V3S	2W3	3.3	3.23	3.37	5	95	5	-3.5	0.9	200	625	150	-55 ~ +150
BZT52B3V6S	2W4	3.6	3.53	3.67	5	90	5	-3.5	0.9	200	625	150	-55 ~ +150
BZT52B3V9S	2W5	3.9	3.82	3.98	5	90	3	-3.5	0.9	200	625	150	-55 ~ +150
BZT52B4V3S	2W6	4.3	4.21	4.39	5	90	3	-3.5	0.9	200	625	150	-55 ~ +150
BZT52B4V7S	2W7	4.7	4.61	4.79	5	80	3	-3.5	0.9	200	625	150	-55 ~ +150
BZT52B5V1S	2W8	5.1	5.00	5.20	5	60	2	-2.7	0.9	200	625	150	-55 ~ +150
BZT52B5V6S	2W9	5.6	5.49	5.71	5	40	1	-2.0	0.9	200	625	150	-55 ~ +150
BZT52B6V2S	2WA	6.2	6.08	6.32	5	10	3	0.4	0.9	200	625	150	-55 ~ +150
BZT52B6V8S	2WB	6.8	6.66	6.94	5	15	2	1.2	0.9	200	625	150	-55 ~ +150
BZT52B7V5S	2WC	7.5	7.35	7.65	5	15	1	2.5	0.9	200	625	150	-55 ~ +150
BZT52B8V2S	2WD	8.2	8.04	8.36	5	15	0.7	3.2	0.9	200	625	150	-55 ~ +150
BZT52B9V1S	2WE	9.1	8.92	9.28	5	15	0.5	3.8	0.9	200	625	150	-55 ~ +150
BZT52B10S	2WF	10	9.80	10.20	5	20	0.2	4.5	0.9	200	625	150	-55 ~ +150
BZT52B11S	2WG	11	10.78	11.22	5	20	0.1	5.4	0.9	200	625	150	-55 ~ +150
BZT52B12S	2WH	12	11.76	12.24	5	25	0.1	6.0	0.9	200	625	150	-55 ~ +150
BZT52B13S	2WI	13	12.74	13.26	5	30	0.1	7.0	0.9	200	625	150	-55 ~ +150
BZT52B15S	2WJ	15	14.70	15.30	5	30	0.1	10.5	0.9	200	625	150	-55 ~ +150
BZT52B16S	2WK	16	15.68	16.32	5	40	0.1	11.2	0.9	200	625	150	-55 ~ +150
BZT52B18S	2WL	18	17.64	18.36	5	45	0.1	12.6	0.9	200	625	150	-55 ~ +150
BZT52B20S	2WM	20	19.60	20.40	5	55	0.1	14.0	0.9	200	625	150	-55 ~ +150
BZT52B22S	2WN	22	21.56	22.44	5	55	0.1	15.4	0.9	200	625	150	-55 ~ +150
BZT52B24S	2WO	24	23.52	24.48	5	70	0.1	16.8	0.9	200	625	150	-55 ~ +150
BZT52B27S	2WP	27	26.46	27.54	2	80	0.1	18.9	0.9	200	625	150	-55 ~ +150
BZT52B30S	2WQ	30	29.40	30.60	2	80	0.1	21.0	0.9	200	625	150	-55 ~ +150
BZT52B33S	2WR	33	32.34	33.66	2	80	0.1	23.1	0.9	200	625	150	-55 ~ +150
BZT52B36S	2WS	36	35.28	36.72	2	90	0.1	25.2	0.9	200	625	150	-55 ~ +150
BZT52B39S	2WT	39	38.22	39.78	2	130	0.1	27.3	0.9	200	625	150	-55 ~ +150

Notes:

1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.

Current Product Availability: Our company currently provides 5.1 V - 20 V products only.

2510101615_CBI-BZT52B7V5S_C51315190.pdf

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