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Power Semiconductor Device ZHHXDZ HX40N120-TO264 IGBT Module Optimized for Induction Heating and UPS

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Power Semiconductor Device ZHHXDZ HX40N120-TO264 IGBT Module Optimized for Induction Heating and UPS

Pd - Power Dissipation : 500W

Td(off) : 110ns

Td(on) : 15ns

Operating Temperature : -55℃~+150℃

Collector-Emitter Breakdown Voltage (Vces) : 200V

Reverse Transfer Capacitance (Cres) : 125pF

IGBT Type : NPT (Non-Punch Through)

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 3.5V@250uA

Gate Charge(Qg) : 220nC@15V

Reverse Recovery Time(trr) : 75ns

Switching Energy(Eoff) : 1.1mJ

Turn-On Energy (Eon) : 2.3mJ

Input Capacitance(Cies) : 3.2nF

Pulsed Current- Forward(Ifm) : 240A

Output Capacitance(Coes) : 370pF

Description : 500W 200V NPT (Non-Punch Through) TO-264 Single IGBTs RoHS

Mfr. Part # : HX40N120-TO264

Model Number : HX40N120-TO264

Package : TO-264

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Product Overview

The HX40N120-TO264 AND series of IGBTs, leveraging Non-Punch-Through (NPT) technology, boasts low conduction and switching losses, making it an ideal solution for various applications including induction heating (IH), motor control systems, general-purpose inverters, as well as uninterruptible power supplies (UPS). Features include high speed switching, low saturation voltage (VCE(sat) = 2.6 V @ IC = 40A), high input impedance, and CO-PAK, IGBT with FRD (trr = 75ns typ.).

Product Attributes

Brand:
Website: www.haixindianzi.com
Model: HX40N120-TO264
Package Type: TO-264
Package Quantity: 25
Version: 1.1
Date: Dec. 2023

Technical Specifications

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Units
VCES	Collector-Emitter Voltage				1200	V
VGES	Gate-Emitter Voltage				25	V
IC	Collector Current @TC = 25C				64	A
IC	Collector Current @TC = 100C				40	A
ICM(1)	Pulsed Collector Current				160	A
IF	Diode Continuous Forward Current @TC = 100C				40	A
IFM	Diode Maximum Forward Current				240	A
PD	Maximum Power Dissipation @TC = 25C				500	W
PD	Maximum Power Dissipation @TC = 100C				200	W
SCWT	Short Circuit Withstand Time	VCE = 600V, VGE = 15V, TC = 125C			10	s
TJ	Operating Junction Temperature		-55		+150	C
TSTG	Storage Temperature Range		-55		+150	C
TL	Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 seconds				300	C
RJC(IGBT)	Thermal Resistance, Junction-to-Case			--	0.25	C/W
RJC(DIODE)	Thermal Resistance, Junction-to-Case			--	0.7	C/W
RJA	Thermal Resistance, Junction-to-Ambient			--	25	C/W
BVCES	Collector-Emitter Breakdown Voltage	VGE = 0V, IC = 1mA	1200	--	--	V
TJ	Temperature Coefficient of Breakdown Voltage	VGE = 0V, IC = 1mA		0.6		V/C
ICES	Collector Cut-Off Current	VCE = VCES, VGE = 0V		--	1	mA
IGES	G-E Leakage Current	VGE = VGES, VCE = 0V		--	250	nA
VGE(th)	G-E Threshold Voltage	IC = 250A, VCE = VGE	3.5	5.5	7.5	V
VCE(sat)	Collector to Emitter Saturation Voltage	IC = 40A, VGE = 15V		2.6	3.2	V
VCE(sat)	Collector to Emitter Saturation Voltage	IC = 40A, VGE = 15V, TC = 125C		2.9	--	V
VCE(sat)	Collector to Emitter Saturation Voltage	IC = 64A, VGE = 15V		3.15	--	V
Cies	Input Capacitance	VCE = 30V, VGE = 0V f = 1MHz		3200	--	pF
Coes	Output Capacitance			370	--	pF
Cres	Reverse Transfer Capacitance			125	--	pF
td(on)	Turn-On Delay Time	VCC = 600V, IC = 40A, RG = 5, VGE = 15V, Inductive Load, TC = 25C		15	--	ns
tr	Rise Time			20	--	ns
td(off)	Turn-Off Delay Time			110	--	ns
tf	Fall Time			40	80	ns
Eon	Turn-On Switching Loss			2.3	3.45	mJ
Eoff	Turn-Off Switching Loss			1.1	1.65	mJ
Ets	Total Switching Loss			3.4	5.1	mJ
td(on)	Turn-On Delay Time	VCC = 600V, IC = 40A, RG = 5, VGE = 15V, Inductive Load, TC = 125C		20	--	ns
tr	Rise Time			25	--	ns
td(off)	Turn-Off Delay Time			120	--	ns
tf	Fall Time			45	--	ns
Eon	Turn-On Switching Loss			2.5	--	mJ
Eoff	Turn-Off Switching Loss			1.8	--	mJ
Ets	Total Switching Loss			4.3	--	mJ
Qg	Total Gate charge	VCE = 600V, IC = 40A, VGE = 15V		220	330	nC
Qge	Gate-Emitter Charge			25	38	nC
Qgc	Gate-Collector Charge			130	195	nC
VFM	Diode Forward Voltage	IF = 40A TC = 25C		3.2	4.0	V
VFM	Diode Forward Voltage	TC = 125C		2.7	--	V
trr	Diode Reverse Recovery Time	IF = 40A, di/dt = 200A/s TC = 25C		75	112	nS
trr	Diode Reverse Recovery Time	TC = 125C		130	--	nS
Irr	Diode Peak Reverse Recovery Current	TC = 25C		8	12	A
Irr	Diode Peak Reverse Recovery Current	TC = 125C		13	--	A
Qrr	Diode Reverse Recovery Charge	TC = 25C		300	450	nC
Qrr	Diode Reverse Recovery Charge	TC = 125C		845	--	nC

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